abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v d m = 2800 v i t(av)m = 2430 a i t(rms) = 3820 a i tsm = 4310 3 a v t0 = 0.85 v r t = 0.16 m w bi-directional control thyristor 5stb 24n2800 doc. no. 5sya1041-04 may 07 two thyristors integrated into one wafer patented free-floating silicon technology designed for energy management and industrial applications optimum power handling capability interdigitated amplifying gate the electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) blocking maximum rated values 1) parameter symbol conditions 5stb 24n2800 unit max repetitive peak forward blocking voltage v rm f = 50 hz, t p = 10 ms, t vj = 5?125c, note 1 2800 v critical rate of rise of off- state voltage dv/dt crit exp. to 1880 v, t vj = 125c 1000 v/ m s characteristic values parameter symbol conditions min typ max unit max reverse leakage current i rm v rm , t vj = 125 c 400 ma note 1: voltage de-rating factor of 0.11% per c is applicable for tvj below +5 c mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 81 90 108 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 2.9 kg housing thickness h f m = 90 kn, t a = 25 c 34.4 35 mm surface creepage distance d s 53 mm air strike distance d a 22 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5stb 24n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1041-04 may 07 page 2 of 7 on-state maximum rated values 1) parameter symbol conditions min typ max unit average on-state current i t(av)m half sine wave, t c = 70 c 2430 a rms on-state current i t(rms) 3820 a rms on-state current i t(rms) full sine wave, t c = 70 c 5400 a peak non-repetitive surge current i tsm 43.010 3 a limiting load integral i 2 t t p = 10 ms, t vj = 125 c, sine wave after surge: v d = v r = 0 v 9.2510 6 a 2 s peak non-repetitive surge current i tsm 46.010 3 a limiting load integral i 2 t t p = 8.3 ms, t vj = 125 c, sine wave after surge: v d = v r = 0 v 8.7810 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v t i t = 3000 a, t vj = 125 c 1.35 v threshold voltage v t0 0.85 v slope resistance r t i t = 1500 a - 4500 a, t vj = 125 c 0.16 m w holding current i h t vj = 25 c 250 ma t vj = 125 c 150 ma latching current i l t vj = 25 c 500 ma t vj = 125 c 300 ma switching maximum rated values 1) parameter symbol conditions min typ max unit critical rate of rise of on- state current di/dt crit cont. f = 50 hz 250 a/s critical rate of rise of on- state current di/dt crit t vj = 125 c, i trm = 3000 a, v d 1880 v, i fg = 2 a, t r = 0.5 s cont. f = 1hz 500 a/s circuit commutated turn-off time t q t vj = 125 c, i trm = 2000 a, v r = 200 v, di t /dt = -1.5 a/s, v d 0.67 v rm , dv d /dt = 20 v/s, 400 s critical rate of rise of commutating voltage dv/dt com t vj = 125 c, v r 0.67 v rm 500 v/s characteristic values parameter symbol conditions min typ max unit reverse recovery charge q rr 1000 2100 as reverse recovery current i rm t vj = 125 c, i trm = 2000 a, v r = 200 v, di t /dt = -1.5 a/s 30 80 a gate turn-on delay time t gd t vj = 25 c, v d = 0.4 v rm , i fg = 2 a, t r = 0.5 s 3 s
5stb 24n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1041-04 may 07 page 3 of 7 triggering maximum rated values 1) parameter symbol conditions min typ max unit peak forward gate voltage v fgm 12 v max. rated peak forward gate current i fgm 10 a peak reverse gate voltage v rgm 10 v max. rated gate power loss p g for dc gate current 3 w max. rated peak forward gate power p gm(av) see fig. 9 w characteristic values parameter symbol conditions min typ max unit gate trigger voltage v gt t vj = 25 c 2.6 v gate trigger current i gt t vj = 25 c 400 ma gate non-trigger voltage v gd v d = 0.4 x v rm , t vj = 125 c 0.3 v gate non-trigger current i gd v d = 0.4 x v rm 10 ma thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 125 c storage temperature range t stg -40 140 c characteristic values parameter symbol conditions min typ max unit r th(j-c) double-side cooled f m = 81...108 kn 11.4 k/kw thermal resistance junction to case (valid for one thyristor half no heat flow to the second half.) r th(j-c) single-side cooled f m = 81...108 kn 22.8 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 81...108 kn 2 k/kw r th(c-h) single-side cooled f m = 81...108 kn 4 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i c) - th(j ? = i t i 1 2 3 4 r i (k/kw) 6.770 2.510 1.340 0.780 t i (s) 0.8651 0.1558 0.0212 0.0075 fig. 1 transient thermal impedance (junction-to- case) vs. time
5stb 24n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1041-04 may 07 page 4 of 7 fig. 2 on-state voltage characteristics fig. 3 on-state characteristics. t j = 125c, 10ms half sine. 0500100015002000250030003 5 0 0 i t a v ( a ) 70 75 80 85 90 95 100 105 110 115 120 125 130 t case ( c ) d c 1 8 0 r e c t a n g u l a r 1 8 0 s i n e 1 2 0 r e c t a n g u l a r 5 s t b 2 4 n 2 8 0 0 double-s i d e d c o o l i n g fig. 4 on-state power dissipation vs. mean on-state current. turn-on losses excluded. fig. 5 max. permissible case temperature vs. mean on-state current. switching losses ignored.
5stb 24n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1041-04 may 07 page 5 of 7 fig. 6 surge on-state current vs. pulse length. half-sine wave. fig. 7 surge on-state current vs. number of pulses. half-sine wave, 10 ms, 50hz. i gm i gon 100 % 90 % 10 % i gm ? 2..5 a i gon 3 1.5 i gt di g /dt 3 2 a/ m s t r 1 m s t p (i gm ) ? 5...20 m s di g /dt t r t p (i gm ) i g (t) t t p (i gon ) fig. 8 recommended gate current waveform fig. 9 max. peak gate power loss fig. 10 reverse recovery charge vs. decay rate of on-state current fig. 11 peak reverse recovery current vs. decay rate of on-state current
5stb 24n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1041-04 may 07 page 6 of 7 turn-on and turn-off losses fig. 12 turn-on energy, half sinusoidal waves fig. 13 turn-on energy, rectangular waves fig. 14 turn-off energy, half sinusoidal waves fig. 15 turn-off energy, rectangular waves q rr i t (t), v(t) t -di t /dt i t (t) -v 0 -v rm v(t) -i rm dv/dt com total power loss for repetitive waveforms: f w f w p p off on t tot + + = where dt i v i t p t t t t t = 0 ) ( 1 fig. 16 current and voltage waveforms at turn-off fig. 17 relationships for power loss
5stb 24n2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1041-04 may 07 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors g g fig. 18 device outline drawing related documents: 5sya 2020 design of rc-snubber for phase control applications 5sya 2049 voltage definitions for phase control thyristors and diodes 5sya 2051 voltage ratings of high power semiconductors 5sya 2034 gate-drive recommendations for pct's 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors 5szk 9104 specification of environmental class for pressure contact diodes, pcts and gto, storage available on request, please contact factory 5szk 9105 specification of environmental class for pressure contact diodes, pcts and gto, transportation available on request, please contact factory please refer to http://www.abb.com/semiconductors for current version of documents.
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